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  Datasheet File OCR Text:
 PROCESS
CPS090
Silicon Controlled Rectifier
8.0 Amp Sensitive Gate SCR Chip
PROCESS DETAILS Process Die Size Die Thickness Cathode Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization Glass Passivated Mesa 90 x 90 MILS 8.7 MILS 60 x 30 MILS 22 x 22 MILS Al - 45,000A Al/Mo/Ni/Ag - 32,000A
GEOMETRY
GROSS DIER PER 4 INCH WAFER 1,310 PRINCIPAL DEVICE TYPES CS220-8M Series CSD-8M Series CSDD-8M Series
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R0 (4- January 2006)


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